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Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.70.1
Features
* High collector-base voltage (Emitter open) VCBO * Full-pack package which can be installed to the heat sink with one screw
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2SD1263 2SD1263A VCEO VEBO IC ICP TC = 25C PC Tj Tstg Symbol VCBO Rating 350 400 250 300 5 0.75 1.5 35 2.0 150 -55 to +150 C C V A A W V Unit V
16.70.3
3.10.1
Solder Dip (4.0)
1.40.1
1.30.2 0.5+0.2 -0.1
14.00.5
Collector-emitter voltage 2SD1263 (Base open) 2SD1263A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
0.80.1
2.540.3 5.080.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1263 2SD1263A 2SD1263 2SD1263A IEBO hFE1
*
Symbol 2SD1263 2SD1263A VBE ICES ICEO VCEO
Conditions IC = 30 mA, IB = 0 VCE = 10 V, IC = 1 A VCE = 350 V, VBE = 0 VCE = 400 V, VBE = 0 VCE = 150 V, IB = 0 VCE = 200 V, IB = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 0.3 A VCE = 10 V, IC = 1 A IC = 1 A, IB = 0.2 A VCE = 5 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V
Min 250 300
Typ
Max
Unit V
1.5 1 1 1 1 1 40 10 1 30 0.5 2.0 0.5 250
V mA
mA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
mA V MHz s s s
hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 40 to 90 Q 70 to 150 P 120 to 250
Publication date: April 2003
SJD00179BED
1
2SD1263, 2SD1263A
PC Ta
50
IC VCE
1.2
4.0
TC=25C
IC VBE
VCE=10V
Collector power dissipation PC (W)
40
(1)
Collector current IC (A)
Collector current IC (A)
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W)
1.0
IB=14mA 12mA 10mA 8mA 6mA
3.2
TC=100C
25C -25C
0.8
30
2.4
0.6
20
1.6
0.4
4mA
10
(2) (3) (4)
0.2
2mA
0.8
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
104
IC/IB=10
hFE IC
VCE=10V
fT I C
1 000
VCE=10V f=10MHz TC=25C
10
103
Transition frequency fT (MHz)
1 10
TC=100C
Forward current transfer ratio hFE
100
1
TC=100C
102
25C -25C
10
25C -25C
0.1
10
1
0.01 0.01
0.1
1
1 0.01
0.1
0.1 0.001
0.01
0.1
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
10
Non repetitive pulse TC=25C
Rth t
103
(1)Without heat sink (2)With a 100x100x2mm Al heat sink
Thermal resistance Rth (C/W)
ICP
102
(1)
Collector current IC (A)
1
IC t=10ms DC
t=1ms
10
(2)
0.1
1
0.01
2SD1263A 2SD1263
10-1
0.001
1
10
100
1 000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00179BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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